a op150/op250/op450 pin configurations cmos single-supply rail-to-rail input/output operational amplifier information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by analog devices for its use, nor for any infringements of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of analog devices. this information applies to a product under development. its characteristics and specifications are subject to change without notice. analog devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. features single-supply operation: 2.7 v to 6 v high output current: 6 250 ma low supply current: 600 m a/amp wide bandwidth: 4 mhz slew rate: 6.5 v/ m s no phase reversal low input currents unity gain stable applications battery powered instrumentation multi media audio medical remote sensors asic input or output amplifier automotive headphone driver general description the op150, op250 and op450 are single, dual and quad cmos single-supply, 4 mhz bandwidth amplifiers featuring rail-to-rail inputs and outputs. all are guaranteed to operate from a 3 volt single supply as well as a +5 volt supply. the op150 family of amplifiers have very low input bias cur- rents. the outputs are capable of driving 250 ma loads and are stable with capacitive loads as high as 500 pf. applications for these amplifiers include portable medical equipment, safety and security, and interface for transducers with high output impedances. supply current is only 600 m a per amplifier. the ability to swing rail-to-rail at both the input and output en- ables designers to build multistage filters in single-supply sys- tems and maintain high signal-to-noise ratios. the op150/op250/op450 are specified over the extended in- dustrial (-40 c to +125 c) temperature range. the op150 single amplifiers are available in 8-pin so surface mount and the 5-pin sot23-5 packages. the op250 dual is available in 8- pin plastic dips and so surface mount packages. the op450 quad is available in 14-pin dips, tssop and narrow 14-pin so packages. consult factory for tssop availability. 8-lead narrow-body so (s suffix) op150 out v+ nc nc nc ?n +in v 8-lead narrow-body so (s suffix) op250 ?n b out b +in b v+ out a ?n a +in a v 14-lead epoxy dip (p suffix) 1 2 3 4 5 6 7 14 13 12 11 10 9 8 op450 out d ?n d +in d v +in c ?n c out c out a ?n a +in a v+ +in b ?n b out b 5-lead sot23-5 (rt suffix) op150 out v +in v+ ?n 8 lead epoxy dip (p suffix) 1 2 3 4 8 7 6 5 op250 out b ?n b +in b v+ out a ?n a +in a v 14-lead so (s suffix) +in d ?n d out d out a ?n a +in a v+ ?n c +in c out c +in b ?n b out b v op450 14-lead tssop (ru suffix) op450 one technology way, p.o. box 9106, norwood, ma 02062-9106, u.s.a. tel: 617/329-4700 fax: 617/326-8703 rev. 0 preliminary technical data obsolete
op150/op250/op450Cspecifications electrical characteristics parameter symbol conditions min typ max units input characteristics offset voltage op150 v os 5mv C40 c t a +125 cmv offset voltage op250/op450 v os 5mv C40 c t a +125 cmv input bias current i b 10 60 pa C40 c t a +125 cpa input offset current i os 25 pa C40 c t a +125 cpa input voltage range 0 3 v common-mode rejection ratio cmrr v cm = 0 v to 3 v 60 db C40 c t a +125 cdb large signal voltage gain a vo r l = 10 k w , v o = 0.3 v to 2.7 v 40 v/mv C40 c t a +125 c v/mv large signal voltage gain a vo r l = 2 k w , v o = 0.3 v to 2.7 v 16 v/mv large signal voltage gain a vo r l = 1 k w , v o = 0.3 v to 2.7 v 10 v/mv offset voltage drift d v os / d t m v/ c bias current drift d i b / d t pa/ c offset current drift d i os / d t pa/ c output characteristics output voltage high v oh i l = 100 m a 2.95 2.99 v C40 c to +125 cv i l = 10 ma 2.95 v C40 c to +125 cv output voltage low v ol i l = 100 m a 2 10 mv C40 c to +125 cmv i l = 10 ma 30 55 mv C40 c to +125 cmv output current i out 250 ma C40 c to +125 cma open loop impedance z out f = 1 mhz, a v = 1 w power supply power supply rejection ratio psrr v s = 2.7 v to 6 v 70 db C40 c t a +125 c68 db supply current/amplifier i sy v o = 0 v 500 600 m a C40 c t a +125 c 650 m a dynamic performance slew rate sr r l =10 k w 2.7 v/ m s settling time t s to 0.01% m s gain bandwidth product gbp 2 mhz phase margin ?o 75 degrees channel separation cs f = 1 khz, r l =10 k w db noise performance voltage noise e n p-p 0.1 hz to 10 hz m v p-p voltage noise density e n f = 1 khz 55 nv/ ? hz current noise density i n pa/ ? hz specifications subject to change without notice. (@ v s = +3.0 v, v cm = 0.05 v, v o = 1.4 v, t a = +25 8 c, unless otherwise noted) this information applies to a product under development. its characteristics and specifications are subject to change without notice. analog devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. rev. 0 preliminary technical data C2C obsolete
this information applies to a product under development. its characteristics and specifications are subject to change without notice. analog devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. op150/op250/op450 rev. 0 preliminary technical data C3C electrical characteristics parameter symbol conditions min typ max units input characteristics offset voltage op150 v os 5mv C40 c t a +125 cmv offset voltage op250/op450 v os 5mv C40 c t a +125 cmv input bias current i b 30 50 pa C40 c t a +125 c60pa input offset current i os 0.1 8 pa C40 c t a +125 c16pa input voltage range 0 5 v common-mode rejection ratio cmrr v cm = 0 v to 5 v 60 db C40 c t a +125 cdb large signal voltage gain a vo r l = 10 k w , v o = 0.3 v to 4.7 v 40 v/mv C40 c t a +125 c v/mv large signal voltage gain a vo r l = 2 k w , v o = 0.3 v to 2.7 v 16 v/mv large signal voltage gain a vo r l = 1 k w , v o = 0.3 v to 2.7 v 10 v/mv offset voltage drift d v os / d t C40 c t a +125 c 1.5 m v/ c bias current drift d i b / d t 100 pa/ c offset current drift d i os / d t 20 pa/ c output characteristics output voltage high v oh i l = 100 m a 4.99 v C40 c to +125 cv i l = 10 ma 4.95 v C40 c to +125 cv output voltage low v ol i l = 100 m a2mv C40 c to +125 cmv i l = 10 ma 30 mv C40 c to +125 cmv output current i out 250 ma C40 c to +125 cma open loop impedance z out f = 1 mhz, a v = 1 w power supply power supply rejection ratio psrr v s = 2.7 v to 6 v 75 db C40 c t a +125 c70 db supply current/amplifier i sy v o = 0 v m a C40 c t a +125 c 550 650 m a dynamic performance slew rate sr r l =10 k w 6.5 v/ m s full power bandwidth bw p 1% distortion khz settling time t s to 0.01% m s gain bandwidth product gbp 4 mhz phase margin ?o 75 degrees channel separation cs f = 1 khz, r l =10 k w db noise performance voltage noise e n p-p 0.1 hz to 10 hz m v p-p voltage noise density e n f = 1 khz 55 nv/ ? hz voltage noise density e n f = 10 khz 35 nv/ ? hz current noise density i n pa/ ? hz specifications subject to change without notice. (@ v s = +5.0 v, v cm = 0.05 v, v o = 1.4 v, t a = +25 8 c, unless otherwise noted) obsolete
op150/op250/op450 this information applies to a product under development. its characteristics and specifications are subject to change without notice. analog devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. rev. 0 preliminary technical data C4C warning! esd sensitive device caution esd (electrostatic discharge) sensitive device. electrostatic charges as high as 4000 v readily accumulate on the human body and test equipment and can discharge without detection. although the op150/op250/op450 features proprietary esd protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. therefore, p roper esd precautions are recommended to avoid performance degradation or loss of functionality. wafer test limits parameter symbol conditions limit units offset voltage v os 10 mv max input bias current i b 50 pa max input offset current i os 10 pa max input voltage range v cm vC to v+ v min common-mode rejection ratio cmrr v cm = 0 v to 10 v 60 db min power supply rejection ratio psrr v = +2.7 v to +7 v 70 db min large signal voltage gain a vo r l = 10 k w v/mv min output voltage high v oh r l = 2 k w to gnd 2.9 v min output voltage low v ol r l = 2 k w to v+ 55 mv max supply current/amplifier i sy v o = 0 v, r l = 650 m a max note electrical tests and wafer probe to the limits shown. due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing. (@ v s = +5.0 v, v cm = 0 v, t a = +25 8 c unless otherwise noted.) absolute maximum ratings 1 supply voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7 v input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . gnd to v s differential input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 7 v output short-circuit duration to gnd 2 . . . . . . . . . indefinite storage temperature range p, s, rt, ru package . . . . . . . . . . . . . . . . C65 c to +150 c operating temperature range op150/op250/op450g . . . . . . . . . . . . . . . C40 c to +125 c junction temperature range p, s, rt, ru package . . . . . . . . . . . . . . . . C65 c to +150 c lead temperature range (soldering, 60 sec) . . . . . . . +300 c package type q ja 3 q jc units 5-pin sot (rt) 325 c/w 8-pin plastic dip (p) 103 43 c/w 8-pin soic (s) 158 43 c/w 8-pin tssop (ru) 240 43 c/w 14-pin plastic dip (p) 76 33 c/w 14-pin soic (s) 120 36 c/w 14-pin tssop( ru) 180 35 c/w notes 1 absolute maximum ratings apply to both dice and packaged parts, unless otherwise noted. 2 q ja is specified for the worst case conditions, i.e., q ja is specified for device in socket for p-dip packages; q ja is specified for device soldered in circuit board for soic package. ordering guide temperature model range package option op150gs C40 c to +125 c 8-pin soic op150grt C40 c to +125 c 5-pin sot op150gbc +25 c dice op250gp C40 c to +125 c 8-pin plastic dip op250gs C40 c to +125 c 8-pin soic op250gru C40 c to +125 c 8-pin tssop op250gbc +25 c dice op450gp C40 c to +125 c 14-pin plastic dip op450gs C40 c to +125 c 14-pin soic op450gru C40 c to +125 c 14-pin tssop op450gbc +25 c dice obsolete
this information applies to a product under development. its characteristics and specifications are subject to change without notice. analog devices assumes no obligation regarding future manufacture unless otherwise agreed to in writing. op150/op250/op450 rev. 0 preliminary technical data C5C dice characteristics op150 die size 0.00 0.00 inch, 00 sq. mils substrate (die backside) is connected to vC transistor count, 00. op250 die size 0.044 0.045 inch, 1,980 sq. mils substrate (die backside) is connected to vC transistor count, 0. op450 die size 0.052 0.058 inch, 3,016 sq. mils substrate (die backside) is connected to vC transistor count, 127. v out ? v r load ? w 2.5 2.0 0 0 200 20 40 60 80 100 120 140 160 180 1.5 1.0 0.5 v ol v oh figure 1. v out vs. r load obsolete
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